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OSW26BZ06-NV026 Open
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Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors

Open Science technology and other research and development Posted 2 Sep 2026
Deadline 21 Oct 2026 13 days left

Overview

Funding agency
Office of the Secretary of Defense DOW-OSD
Reference
OSW26BZ06-NV026
Funding programme
Science technology and other research and development
Funding instrument
Procurement contract
Region
United States
Applicants based in
United States
Source
SBIR.gov - SBIR and STTR solicitation topics
Data credit
Source: SBIR.gov, U.S. Small Business Administration

About the funder

Funder
Office of the Secretary of Defense Government, United States
Open calls
18 open calls Giving history, how to apply, and Follow on the funder page

Description

Hydrogen-terminated (surface-channel) diamond transistors hold great promise for next-generation, high-frequency, high-power RF electronics and advanced communications due to diamond's high breakdown field and superior thermal conductivity. However, wide-scale operational deployment is constrained by "current collapse" and "knee walkout" - phenomena where transient charges trapped at defect…

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